Abstract
A novel heterojunction high-frequency source is described. It operates based on a polarization-induced limit cycle oscillation of the trapped-hole charge in one of the barriers of a double-barrier heterostructure with staggered band-gap alignment. A physically based mathematical model of quantum transport rate equations yields the dynamical behaviour of this device structure. The condition for the existence of autonomous device oscillation is derived. The amplitude of the trapped-charge oscillation increases with the applied bias. A proof of the step function characteristic of the time-averaged values of the trapped hole charge in the barrier as a function of bias is given. These results yield agreement with the experimental measurements of the `parallelepiped' hysteresis of the average current - voltage characteristic of an AlGaSb/InAs/AlGaSb heterostructure. Thus a class of novel high-frequency oscillators useful for high-bandwidth applications is introduced.
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