Abstract
This paper presents an integrated ultrasonic transducer structure with improved sensitivity which contains a MOSFET-BJT (bipolar junction transistor) sense amplifier. The extended-gate electrode of the MOSFET is placed over an epitaxial layer isolated from a silicon substrate and is padded up with a polyimide (PI) dielectric layer, which significantly reduces the extended-gate capacitance and therefore increases the sensor sensitivity. The effects of PI preparation conditions on the resulting film are examined. The frequency response of the sense circuit and the impulse response of the proposed structure used as a receiver are tested. With a 5.2 μm thick PI layer, a sensitivity improvement of over 13 dB is achieved when compared with the normal transducer structure. These results match the predictions of voltage-transfer analysis and circuit simulation.
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