Abstract
An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 μm CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si-diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond. A cross-point memory selector with a large on/off current ratio is demonstrated, the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state. A low SET programming current of 0.7 mA is achieved and RESET/SET resistance difference of 10000× is obtained.
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