Abstract
A 144-element array of crosspoint switches has been fabricated. With a total insertion loss of 0.04 dB on a 600 /spl Omega/ load and an off state capacitance of 0.4 pF the chip can be used in large switching systems. The crosspoint has a breakdown voltage of 40 V, a holding current of 800 /spl mu/A. A good immunity against transient pulses is achieved by a high dynamic breakdown: typically 3.5 V/ns. The design uses the conventional buried collector technology and the interconnection requires two levels of metal. The process has been optimized to maintain the substrate leakage factor lower than 6.6 E-4. The chip measures 4.3/spl times/4.1 mm square and is mounted on a 76-pin ceramic substrate. The structural and electrical design of the crosspoint are described and some considerations about the modeling are discussed.
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