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Abstract
The Schottky magnetodiode is the combination of two basic phenomena : the magnetodiode effect in double-injecting P+ NN+ structures and the effect of the carrier density modulation on the Schottky reverse current. Our devices, realized in SOS technology, denote magnetosensitivities of about 10 V/T. We investigate the influence of the geometrical parameters, injection rate and doping level in order to improve the device sensitivity.
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