Abstract

The present research article evaluates the performance of ultrasonic and chemically assisted double disk magnetic abrasive finishing (DDMAF) on polishing Si (100). The process parameters namely polishing speed, working gap, and pulse on time with five levels of each have been utilized to explore the surface roughness of polished Si (100). The statistical analysis revealed that polishing speed with a share of 71.1% was the most significant process parameter swaying the process performance on surface roughness. Furthermore, the share of working gap and pulse on time was found to be 3.04% and 1.65% respectively. The polishing speed interaction with pulse on time was found more influencing having share of 10.69% on surface roughness followed by working gap and pulse on time interaction with a share of 3.58%. The pooled regression equation with significant process parameters was used to obtain minimum surface roughness using genetic algorithm (GA) function available with MatLab 13 software package. The best polished face of Si (100) having surface roughness of 11.6 nm under optimum polishing condition has been achieved (1.5 nm on atomic force microscopy (AFM) scale). The scanning electron microscopy (SEM) and AFM inspections under optimum polishing condition of polished Si (100) were carried out. From the topographical inspection, it was observed that no scratch marks existed in the polishing direction. An evenly polished surface was obtained after polishing Si (100) under the influence of ultrasonic and chemically assisted DDMAF.

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