Abstract
We propose and demonstrate an integrated power MOSFET structure where a fast-switching antiparallel rectifier with improved reverse recovery is integrated within the conventional DMOSFET structure. In this device, the source metal electrode of the DMOSFET is extended to the n-drift region, and a thin p-layer is implanted under the metal forming a junction diode antiparallel to the DMOSFET. Analysis of the experimental switching performance of the integral diode in 500-V integrated power DMOSFET/antiparallel rectifier devices indicates at least 30% decrease in peak reverse current and minority carrier stored charge at 100/spl deg/C.
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