An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI

Abstract

This paper presents an integrated 28 GHz front-end module (FEM) for 5 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> Generation (5G) applications and fabricated in a 45 nm partially depleted silicon on insulator (PD-SOI) technology. In transmit (Tx) mode at 28 GHz, the measured saturated output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ), maximum power-added efficiency (PAE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ), output-referred 1-dB compression point (OP1dB) are 17.2 dBm, 26 % and 16.7 dBm, respectively, with 86.4 mW dc power consumption from a 1.8 V supply. In receive (Rx) mode at 28 GHz, the measured gain, noise figure (NF), input-referred 1-dB compression point (IP1dB) are 9dB, 3.6dB and -10dBm, respectively, with 14.8mW dc power consumption from a 1 V supply. The chip core size is 0.62mm x 0.75mm.