Abstract
The construction and operation of an instrument is described that measures excess-carrier lifetimes (1 mu s to 400 mu s) in semiconductors by generating electron-hole pairs with a pulsed flashlamp and contactless probing of the photoconductivity decay with microwaves. This instrument was especially designed for measurements in the thin top layer of SIMOX structures. For this purpose UV radiation is required with a short penetration depth. This made the construction of a special UV filter necessary that transmits below 400 nm and blocks all longer wavelength radiation up to the silicon band gap wavelength.
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