Abstract
An instability of metal-aluminum oxide-silicon dioxide-silicon (MAOS) structures is investigated by the capacitance-voltage characteristics. Furthermore, experiments are examined for MAOS structures obtained by annealing in the various ambients, and also compared with metal-aluminum oxide-silicon (MAS) and metal-aluminum oxide-silicon nitride-silicon dioxide-silicon (MANOS) structures. The new instability of a minor shift of the flat band voltage, displayed as a small negative (positive) shift in the flat band voltage under a positive (negative) bias, is observed in MAOS structures, and can be attributed to the polarization effect in AlxSiyOz layer, between silicon dioxide and aluminum oxide films, formed during the deposition of aluminum oxide film onto silicon dioxide film on silicon and during the annealing in oxygen or air.
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