Abstract
A 60 nm gate length, n-type Gate all around (GAA) metal oxide semiconductor field effect transistor (MOSFET) is simulated at different temperature. The temperature dependent electrical characteristics for various temperature are investigated extensively. The improved gate controllability in lower technology node as well as immunity against short channel effects are thoroughly examined. This paper also includes the analog performance analysis of GAA MOSFET along with the DC performances. The performance matrix of the device for different temperature ranging from 70 K to 800 K were illustrated clearly. Results exhibit that the drain current, transconductance, device gain and transconductance to drain current ratio (gm/Ids) improves when temperature is decreased.
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