Abstract
A new output-controllable InSb infrared (i.r.) detector is proposed. The detector is fabricated by monolithically integrating an InSb p-n junction with an InSb p-channel enhancement mode metal oxide semiconductor field effect transistor (MOSFET). During operation, a photocurrent generated near the source junction is controllably switched to the drain terminal by a gate of the integrated MOSFET. The observed internal quantum efficiency in the ‘on’ state is as high as 85%. Photocurrent on-off ratios are between 260 and 730, improving with increasing channel length. For longchannel devices, the photocurrent in the ‘off’ state is limited by undesired leakage paths. The new structure can be used as an output-controllable i.r. detector.
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