Abstract
A simple model based on electron acceleration in the conduction band giving rise to an increased F + oxygen vacancy lifetime provides an explanation for several radiation induced electrical degradation (RIED) associated observations in Al 2O 3. The increased F + radioluminescence noted during RIED is a direct consequence of the lifetime increase. The model predicts the observed electric field threshold for RIED, and an increase in the field threshold with increasing impurity content. RIED for RF electric fields is also explained. In addition the lifetime increase provides an explanation for the enhanced oxygen vacancy aggregation including colloid and gamma alumina production observed under RIED conditions.
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