Abstract
We first report the feasibility of using large-grain polycrystalline silicon films as a sensing material for infrared bolometers. To increase the average grain size of polysilicon films, we used seed selection through ion channeling, which resulted in a large grain size of 1670 Å. The temperature coefficient of resistance (TCR) at 20°C and the grain boundary defect density of the film were as high as -2.46%/K for a resistivity of 30 Ω cm and about 1.752×1012/cm2, respectively. From the measurement of noise characteristics of the film, the value of k, 1/ f noise parameter, was calculated to be 1.35×10-9. As a result, the estimated detectivity was found to approach 5.6×108 cm Hz1/2/W.
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