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Abstract
In this paper, we presented a new pyroelectric detector with back to back silicon cups and micro-bridge structure. The PZT thick film shaped in the front cup was directly deposited with designed pattern by electrophoresis deposition (EPD). Pt/Ti Metal film, which was fabricated by standard photolithography and lift-off technology, was sputtered to connect the top electrode and the bonding pad. The cold isostatic press (CIP) treatment could be applied to improve the pyroelectric properties of PZT thick film. The infrared (IR) properties the CIP-optimized detector were measured. The voltage responsivity (RV) was 4.5×102V/W at 5.3Hz, the specific detectivity (D*) was greater than 6.34×108cmHz1/2W−1 (frequency>110Hz), and the thermal time constant was 51ms, respectively.
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