Abstract
We report on infrared studies of the 887cm−1 band arising in silicon, subjected to neutron irradiation with subsequent thermal anneals. Deconvolution of this band indicates the presence of two peaks: a strong one at 887cm−1 and a weak one at 884cm−1. The 887cm−1 peak is, generally, attributed to the VO2 defect. We have tentatively correlated the 884cm−1 peak to a [VO2+V] defect structure. Theoretical calculations of the vibrational frequencies of the two defects support the above hypothesis. The new picture for the 887cm−1 band, could account for the exhibited uniaxial-stress behaviour.
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