Abstract
A TXRF industrial facility for the mapping of trace impurities on the surface of 300-mm Silicon wafers is presently in the construction phase and will start the commissioning phase at the end of 1998. The elements to be detected range from Na to Hg with a target routine detection limit of 108 at/cm2 and the capability of mapping the surface of 300-mm wafer with a resolution of 500 pixels and a throughput of three wafers/h.
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