Abstract
An Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systems
Highlights
Next-generation wireless communication systems such as fifth generation (5G) [1], [2] always require power amplifier (PA) of the transceiver to meet various stringent critical standards
An independently biased 3-stack GaN high-electron-mobility transistor (HEMT) power amplifier is presented in this paper
The PA aims at designing for using in the next-generation wireless communication systems
Summary
Next-generation wireless communication systems such as fifth generation (5G) [1], [2] always require power amplifier (PA) of the transceiver to meet various stringent critical standards. Doherty amplifier [6,7,8] improves linearity by using a back-off technique to move operation condition to the linear region at the cost of reduced output power and efficiency. The reduced efficiency at the linear region in the Doherty can be improved by using the envelope tracking technique [9,10,11] This technique is implemented by employing an adaptive bias control for the saturated PA. This technique requires several hardware components leading to higher power consumption and increasing complexity of the circuit Another recent solution to improve linearity of the PA is using the DPD technique [12,13,14]. This helps to reduce both complexity of the system and the circuit size
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