Abstract
The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-μm wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-μm gate length and an active area of 50×50 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibits a responsivity of 235 A/W, at 11-μW incident optical power. The photoconductive response is higher than for an metal-semiconductor-metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz.
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