An in situ trap capacitance measurement and ion-trapping detection scheme for a Penning ion trap facility.

Abstract

This paper presents the design and implementation of an in situ measurement setup for the capacitance of a five electrode Penning ion trap (PIT) facility at room temperature. For implementing a high Q resonant circuit for the detection of trapped electrons/ions in a PIT, the value of the capacitance of the trap assembly is of prime importance. A tunable Colpitts oscillator followed by a unity gain buffer and a low pass filter is designed and successfully implemented for a two-fold purpose: in situ measurement of the trap capacitance when the electric and magnetic fields are turned off and also providing RF power at the desired frequency to the PIT for exciting the trapped ions and subsequent detection. The setup is tested for the in situ measurement of trap capacitance at room temperature and the results are found to comply with those obtained from measurements using a high Q parallel resonant circuit setup driven by a standard RF signal generator. The Colpitts oscillator is also tested successfully for supplying RF power to the high Q resonant circuit, which is required for the detection of trapped electrons/ions.