Abstract
Hydrogen evolution at illuminated p-InP/electrolyte contacts is accompanied by a corrosion reaction leading to indium formation at the semiconductor surface. After this process the electrode response is analyzed in 1 M H{sub 2}SO{sub 4} using current-voltage curves and Mott-Schottky as well as impedance spectroscopic measurements. Mott-Schottky data indicate a shift of the flat-band potential due to In formation whereas barrier heights at the semiconductor surface remain almost constant ({Phi}{beta} {approx} 1 eV). Impedance data under photocurrent flow reveal a nearly ideal Schottky contact after separation of the electrochemical charge transfer at the In surface. 17 refs., 4 figs., 1 tab.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: The Journal of Physical Chemistry
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
