Abstract
Hydrogen evolution at illuminated p-InP/electrolyte contacts is accompanied by a corrosion reaction leading to indium formation at the semiconductor surface. After this process the electrode response is analyzed in 1 M H{sub 2}SO{sub 4} using current-voltage curves and Mott-Schottky as well as impedance spectroscopic measurements. Mott-Schottky data indicate a shift of the flat-band potential due to In formation whereas barrier heights at the semiconductor surface remain almost constant ({Phi}{beta} {approx} 1 eV). Impedance data under photocurrent flow reveal a nearly ideal Schottky contact after separation of the electrochemical charge transfer at the In surface. 17 refs., 4 figs., 1 tab.
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