Abstract
Silver (Ag) nanoparticles (NPs) were coated upon indium oxide (In2O3) nanowires (NW) by a double-step glancing angle deposition (GLAD) technique. The study focuses on the experimental analysis of current (I) versus voltage (V), current (I) versus time (t), as well as impedance (Zexp) versus voltage (V) curves for n-Si/In2O3 NW/Ag NPs/In based devices with a sweeping voltage of ±10 V at room temperature in different frequency responses varying from 100 Hz to 2 MHz. The n-Si/In2O3 NW/Ag NPs/In based device showed faster rise and fall time of 0.13 s and 0.12 s than the other devices due to oxygen-related defect states. The presence of Ag NPs also improved oxygen related defect states, resulting in high impedance value for n-Si/In2O3 NW/Ag NPs/In based device. The series circuit model (SCM) was used to derive the theoretical investigations of impedances, indicating the n-Si/In2O3 NW/Ag NPs/In based device can be used in nanoelectronics applications.
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