Abstract
This study investigates c-axis tilted aluminum nitride (AlN) piezoelectric films for the improvement of both shear and longitudinal acoustic wave resonances. Solidly-mounted resonator (SMR) structure is adopted for the applications of high frequency wireless communications and high sensitivity sensors. As to the piezoelectric layer, c-axis tilted AlN has the capability to excite the dual-mode resonances, namely, the longitudinal and shear mode resonances. In this study, SMR devices made with a seven-layer molybdenum/silicon dioxide (Mo/SiO2) Bragg reflector and the c-axis tilted AlN are carried out. A conventional off-axis sputtering technique is applied to grow the tilted AlN.
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