Abstract
We have demonstrated the enhancement of a GaN-based light emitting diode (LED) by means of a selective etching technique. A conventional LED structure was periodically etched, to form periodic microholes. It showed an improvement of the light extraction efficiency (LEE) of approximately 15%, compared to that of a conventional LED. Furthermore, nano-sized rods inside the microholes were randomly formed by using a powder mask, resulting in an LEE of 43%. From the result of confocal scanning electroluminescence measurement, the light emission arises mainly from the vicinity of the nanorods in the periodic microholes. Therefore, we found that nanorods randomly distributed in periodic microholes in a LED structure play a significant role in the reduction of total internal reflection, by acting as photon wave-guides and scattering centers. This method would be valuable for the fabrication of high efficiency GaN-based LED, in terms of technical simplification and cost.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
