An improvement in standard photolithography resolution based on Kirchhoff diffraction studies

Abstract

This paper demonstrates the realization of submicrometric patterns by using standard photolithography (365 nm). Significant improvements in standard photolithography resolution can be achieved with specific conditions of a very thin layer of photoresist (0.13 µm). Usually, standard photolithography has a resolution limit of about 1 µm. Firstly, using Kirchhoff diffraction theory we show that with these new conditions the theoretical resolution limit could be 0.4 µm. Secondly, in the experimental part, the realization of 0.8 µm size patterns is demonstrated.