Abstract
In this paper, we present a high-frequency small-signal model for MOSFET devices operating in the saturation regime. The model is based on a transmission-line treatment of the gate region, taking into account the distributed resistance-capacitance effects along the width of the device. The gate-source resistance, as well as the induced gate noise arising from the nonquasi-static operation, are included in the model. Closed-form solution of the noise and the y-parameters are obtained. The model is verified with measurements of an 0.8-/spl mu/m device. The y-parameters model is in close agreement with the measured parameters up to 15 GHz, which is higher than the f/sub T/ of the device. The noise model was also verified by comparing the modeled and measured noise resistance.
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