Abstract
We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in commercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance compression/tail-off behaviors. The main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current (I—V) that is valid in all regions of operation. All aspects of the model are validated for 0.25-μm gate-length GaAs and GaN HEMT processes. The simulation results of DC/pulsed I—V, RF large-signal power and intermodulation distortion products show excellent agreement with the measured data.
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