Abstract
According to the characteristics of high power GaN amplifier, the common current-voltage (I-V) temperature dependence model established by Angelov is improved in this research. Besides embodying the surface temperature distribution, the most important improvement is that it can describe the current decreasing trend under high bias voltage due to trapping related dispersion and self-heating effect. The practical application shows that the prediction accuracy of the large signal equivalent circuit model is improved obviously after introducing the proposed I-V model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
