Abstract
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.
Highlights
Wide band gap semiconductor Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are excellent candidates in high frequency power electronics due to their unique advantages of higher breakdown voltage and higher output power density [1]
A GaN monolithic microwave integrated circuit (MMIC) power amplifier at 91 GHz was reported to have 1.7 W output power that is associated with 11% power added efficiency [7]
The proposed model was validated by 0.1 μm AlGaN/GaN HEMTs with different gate width
Summary
Wide band gap semiconductor Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are excellent candidates in high frequency power electronics due to their unique advantages of higher breakdown voltage and higher output power density [1]. A GaN MMIC power amplifier at 91 GHz was reported to have 1.7 W output power that is associated with 11% power added efficiency [7]. It offers a peak small signal gain of 16.7 dB over 90–97 GHz [2] For applications of these devices in circuit design, compact nonlinear device modeling plays an important role in practical design. For applications of these devices in circuit design, compact nonlinear device modeling plays an iMmicproomratcahnintesro20le18i,n9, p39r6actical design. TThhee ccoommppaarriissoonn bbeettwweeeenn tthhee oorriiggiinnaall AAnnggeelloovv mmooddeell aanndd mmooddiiffiieedd oonnee aarree sshhoowwnn iinn FFiigguurree 22. AAppaarrtt ffrroomm tthhee DDIIBBLL eeffffeecctt,, tthhee cchhaannnneell lleennggtthh mmoodduullaattiioonn ccaann aallssoo bbee ccaappttuurreedd iinn tthhee ssttaattiicc IIVV ccuurrvveess,, aass sshhoowwnn iinn FFiigguurree 33.
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