An improved hybrid photon detector based on a SiC Schottky diode

Abstract

In order to improve the temporal response of SiC-HPMTs, a new SiC detector with a faster time response (leading edge 1.5 ns, FWHM 4 ns) was developed for constructing an improved SiC-HPMT. Then the properties of the improved SiC-HPMT were studied in detail. Compared with those of the previous SiC-HPMT, the temporal response of the improved SiC-HPMT, with a leading edge of about 2 ns and a FWHM of less than 5ns was effectively improved. The maximum linear current that exceeded 630 mA depends on both the accelerating and focusing voltage (Va) and the bias voltage (VSiC) of the SiC detector, but has a strong dependence on Va. The scintillation detector comprised of the improved SiC-HPMT and an EJ228 scintillator can accurately obtain the multiple peaks characteristic of the pulsed X-ray source, which indicates that the improved SiC-HPMT can well satisfy the requirements for measuring the time information of fast pulsed radiation fields. In addition, the SiC-HPMT should be placed at the position that deviates from the radiation beam to avoid the direct irradiation on the SiC detector. The improved SiC-HPMT will further expand its application in pulsed radiation field measurements and become a supplement for existing photoelectric detectors.