Abstract

The junctionless transistor is one of the device structures which found tremendous potential in terms of reduction of short channel effects, scaling factors, capacitance & fabrication. In this paper we observed an improved gate capacitance (C gg ) in depletion and inversion regions of a T-shape double gate junctionless transistor with comparison to the single gate junctionless transistor for different oxide thickness (t ox ), doping concentration (N D ) and Gate lengths (Lg).

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