An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution

Abstract

In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown ( Q BD ) and/or time-to-breakdown ( t BD ) during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution ( q-Weibull), which properly describes ( t BD ) data when oxide thickness fluctuations are present, in order to improve reliability assessment of ultra-thin oxides by time-to-breakdown ( t BD ) extrapolation and area scaling. The incorporation of fluctuations allows a physical interpretation of the q-Weibull distribution in connection with the Tsallis statistics. In support to our results, we analyze t BD data of SiO 2 -based MOS devices obtained experimentally and theoretically through a percolation model, demonstrating an advantageous description of the dielectric breakdown by the q-Weibull distribution.