Abstract
This paper presents a method for solving the one-dimensional (1-D) energy balance equation for fully depleted short-channel SOI MOSFET's. This method takes the exact kinetic energy into account and provides a new analytical solution for the non-saturated drain current region. The carrier temperature for spatially homogeneous case is described as a function of the longitudinal electric field and the carrier concentration deviation. The electron temperature is higher than that predicted by old models, which is examined by the two-dimensional simulation. The experimental data on gate current characteristics in short-channel SOI nMOSFET's can be physically interpreted by the proposed 1-D model. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
