An improved analytical model for the statistics of SET emergence point in HfO2 memristive device

Dong Xiang,Cong Ye,Yu Li,Shibing Long,Enrique Miranda,Rulin Zhang,Jordi Suñé

doi:10.1063/1.5085685

Abstract

In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO2/Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO2 memristive device is fully illuminated.

Highlights

We have investigated the dynamic conductive filament (CF) evolution in SET process of memristive device.6,13,14 Different from the usually reported abrupt SET switching, some RRAM devices, for example, the Cu/HfO2/Pt device studied in this work, show complicated SET process with multiple steps
Cell-based analytical percolation model to study the SET switching process has been built, and Weibull distributions of the SET parameters have been demonstrated on the basis of the Weibull model
As concerned as SET emergence point, an improved clustering statistic model with the influence of defect density is taken into account to analyze the statistical characteristic of the experimental data for Cu/HfO2/Pt device

Summary

Introduction

We have investigated the dynamic CF evolution in SET process of memristive device.6,13,14 Different from the usually reported abrupt SET switching, some RRAM devices, for example, the Cu/HfO2/Pt device studied in this work, show complicated SET process with multiple steps. Cell-based analytical percolation model to study the SET switching process has been built, and Weibull distributions of the SET parameters have been demonstrated on the basis of the Weibull model.6,13,14 if we apply the Weibull model to investigate the SET emergence point, the tail bits phenomenon are apt to appear in high percentiles region.

Results

Conclusion