Abstract
An analytical model for short-channel MOSFETs including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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