An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET)

Abstract

The radio-frequency (RF) power characteristics of a silicon-on-insulator metal–semiconductor field-effect transistor (SOI-MESFET) were improved with effective optimization of the simple structure. Separate triple trenches were introduced in the proposed device to improve the electrical performance. The SOI-MESFET with separate triple trenches (TT-SOI-MESFET) benefits from these trenches for dispersion of the potential lines, leading to enhanced RF power features. A comparison of the proposed structure with the simple SOI-MESFET structure revealed that the TT-SOI-MESFET exhibited improved RF power characteristics in terms of breakdown voltage, drain–source conductance, gate–source capacitance, total gate capacitance, maximum output power density, minimum noise figure and global lattice temperature.