Abstract
An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl sim/40, the highest current gain reported for BJT in any polytype of SiC has been experimentally demonstrated in 4H-SiC. The forward drop was /spl sim/1 V at forward current density of 50 A/cm/sup 2/. The current gain decreases hence specific on-resistance increases with increasing temperature. The negative temperature coefficient of /spl beta/ makes the device attractive for paralleling and for preventing thermal runaways.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
