Abstract
Surface states at the semiconductor—electrolyte interface under illumination have been determined. The Faradaic reaction involved at the interface is the hydrogen evolution. An equivalent circuit is proposed which is chosen as giving the best fit to the impedance data among six possible arrangements consistent with present models of the interface. Surface states act as recombination centers decreasing the Faradaic efficiency for the hydrogen evolution reaction. Surface state density at a given bias potential has been calculated to be ≈ 10 12 cm −2. Adsorbed ions induce surface states. Helmholtz double layer resistance is larger than the space charge resistance in the Tafel region; hence, the rate determining step for hydrogen evolution on Si lies in the double layer region.
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