Abstract
In disordered structures localized electronic states are expected to be found having a strong impact on the electronic properties. They are also expected to exist in an icosahedral quasicrystalline semiconductor which is studied therefore with respect to its electronic wave functions. The quasicrystalline model was introduced in part one of this se- ries of articles, its electronic DOS in part two. Based upon the same LCAO tight binding scheme with five orbitals sp 3 s ∗ per atom individual electronic wave functions of the qua- sicrystalline semiconductor are calculated using the Lanczos method on a cubic supercell of 20 000 atoms. The wave functions are analyzed regarding projections on the atomic orbitals, influence of the dangling bonds, spatial distribution, and - most interesting - localization measures like the par- ticipation ratio and the localization length which allow the definition of mobility edges.
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