Abstract
In this paper, the electromagnetic interference and temperature coupling on MOS transistor is analyzed. The temperature controlled platform that combined with the standardized direct power injection method is designed for experimental measurement. Then the temperature effect on MOS device is considered into the conducted electromagnetic immunity model of input/output element (IOE) for typical field programmable gate array. Meanwhile, the proposed immunity model ICIM-CI-T (integrated circuits immunity model-conducted immunity-temperature), which is based on ICIM-CI, is built to predict the influence of thermal effect on the electromagnetic immunity of IOE. Finally, the validation of the ICIM-CI-T model is verified by experimental measurements, and both simulation and measurement results fit very well at different temperatures. Moreover, it is also observed that temperature exerts different effects on the immunity characteristic of IOE with the change of radio frequency interference frequency.
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