Abstract
A problem of determining the characteristics of a semiconductor can be reduced to the study of the quasi-variational inequality, (J. Abouchabaka, R. Aboulaïch, A. Nachaoui and A. Souissi, COMPEL 18 (1999) 143–164.) where the obstacle M(u) is the solution of an elliptic problem depending on u. We present here an hybrid finite element method for the computation of obstacle M(u) and we discuss some numerical aspects appearing in its approximation.
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