Abstract
An high performance Ka-band MMIC fourth harmonic image rejection diode mixer is designed using commercial United Monolithic Semiconductors (UMS) process in this paper. Details of design approach and outcome of simulations are presented. The results show that this mixer has a conversion loss less than 15.2 dB and image rejection ratio (IRR) more than 20 dB in the 34–38 GHz with a wide band IF range up to 3 GHz, for a local oscillating (LO) drive power level of 13 dBm.
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