Abstract
The fabrication and performance of a new type of solid-state hydrogen detector is described. This device is extremely sensitive at room temperature to parts per million of hydrogen in the interesting situation of an oxygen-rich ambient. The device is a heterostructure whose key layer is a TiOx film produced by low-pressure chemical vapor deposition. Due to the presence of this layer, the device switches from one conduction state in oxygen to another in a hydrogen-rich ambient. This transition from one state to the other is a function of the ambient hydrogen concentration and is caused by the evolution of a barrier in the TiOx layer.
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