An extended-temperature I-V model for GaN HEMTs

Abstract

In this paper, a novel extended-temperature current–voltage (I-V) model for Gallium Nitride (GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the traditional Materka nonlinear model, the self-heating and trapping effects are discussed in the paper and incorporated into the proposed model. Compared to the Materka model and other published models, the proposed model is more accurate in both the saturation region and the knee region. A novel sequential temperature-dependent modeling approach is also proposed to minimize the accumulated error from temperature regression of multiple model parameters, while the temperature range of the I-V model is extended to 300 °C. Finally, a simple class-A amplifier circuit is built and tested from 25 °C to 300 °C to validate the proposed model. The test result closely matches with the predicted behavior of the proposed model, especially at high temperatures.