Abstract
We present an extended drift-diffusion modelling to study electron transport in semi-insulating n-GaAs Schottky-barrier diodes. The model accounts for hot-carrier dynamics and associated kinetics of electrical active traps. A field-enhanced capture cross-section of the two deepest electron traps, attributed to EL2 and EL3 centres, is found to determine the main characteristics of this device. A detailed description of the profile of the electric field, free charge and other related quantities is provided. The modelling compares well with available experimental results and confirms the suitability of this device to be used as a detector for nuclear radiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
