Abstract
In this paper, we developed an analytical quantum-mechanical model for the I-V characteristics of cylindrical nanowire junctionless MOSFETs. Our compact model is based on the Landauer formalism to describe the ballistic current transport, as well as in a novel approach to solve the coupled Schrodinger and Poisson equations, in which the radial potential distribution is described as a perturbed harmonic oscillator potential. This approach reduces the complexity of the model derivation and provides an analytical expression for the eigenenergies within the quantum wire. As a consequence, our simplified model takes into account the relevant quantum effects arising from the cylindrical carried confinement but provides explicit and easy to handle expressions for the device characteristics. The proposed model is validated in comparison to available experimental results, with agreement equivalent to much more complex approaches.
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