Abstract
This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.
Highlights
High power 940 nm semiconductor quantum-well-structure laser diodes can be used as optical fiber amplifiers and to pump some solid state lasers
This paper is focused on a 940 nm edge type of semiconductor laser diodes, which is made from 940 nm double-quantum-well quantum well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD)
This paper reports the impact of temperature on the P-I curve, V-I curve, and the centre wavelength of the semiconductor laser diodes
Summary
High power 940 nm semiconductor quantum-well-structure laser diodes can be used as optical fiber amplifiers and to pump some solid state lasers. The centre wavelength, threshold current and output power are affected, in addition to the instability caused by the mode of multimode laser. Those changes shift the laser diodes away from their optimized working. In 2006, Shigeru Kanazawa et al [6] studied the temperature sensitivity of 1.2 μm GaInAs/GaAs quantum-well-structure laser diodes working under high temperature. In 2012, Li et al [7] reported the temperature sensitivity of 1.06 μm InGaAs/InGaAsP quantum-well structure semiconductor laser diodes. This paper reports the impact of temperature on the P-I curve, V-I curve, and the centre wavelength of the semiconductor laser diodes
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