Abstract
In this paper, an experimental study on the low-temperature-grown gallium arsenide (LT-GaAs) photoconductive antenna (PCA) breakdown mechanism is presented. A terahertz (THz) PCA is an important device for the THz wave generation. Due to that the typical LT-GaAs PCA breakdown scenarios, different trigger positions and different bias voltages, have been studied. Breakdown mechanism analysis has shown that when the trigger position was on the antenna electrode edge, the PCA breakdown was more probable to happen, because the electrode edge electric field was nearly 3 times greater than the electric field of the electrode center. Moreover, it has been shown that the thermal effect was the main cause of the LT-GaAs PCA breakdown. Last, the PCA lifetime has been calculated using the current waveform and the thermal effect analysis.
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