Abstract
In this paper the voltage-ampere characteristics of thin film layers in channel electron multipliers (CEM) are presented. It has been found that good I-V characteristics are obtained from uniform and fine layers, and inferior behavior is observed from rough ones. Sufficient reduction of glass, as well as high content of PbO, results in fine surface structure which yields excellent I-V characteristics. The experiment also shows that the I-V behavior can be severely deteriorated by cesium vapour.
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