Abstract
In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.
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